IRFPF30PBF
- Mfr.Part #
- IRFPF30PBF
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 3.6A TO247-3
- Stock
- 4,545
- In Stock :
- 4,545
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 38.000013g
- Continuous Drain Current (ID) :
- 3.6A
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200pF @ 25V
- Fall Time (Typ) :
- 30 ns
- Number of Channels :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 125W Tc
- Supplier Device Package :
- TO-247-3
- Min Operating Temperature :
- -55°C
- Turn On Delay Time :
- 14 ns
- Turn-Off Delay Time :
- 90 ns
- Rise Time :
- 25ns
- Published :
- 2011
- Max Operating Temperature :
- 150°C
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 3.7Ohm @ 2.2A, 10V
- Factory Lead Time :
- 8 Weeks
- Mounting Type :
- Through Hole
- Rds On Max :
- 3.7 Ω
- Length :
- 15.87mm
- Current - Continuous Drain (Id) @ 25°C :
- 3.6A Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Through Hole
- Height :
- 20.7mm
- Drain to Source Voltage (Vdss) :
- 900V
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Power Dissipation :
- 125W
- Width :
- 5.31mm
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Lead Free :
- Lead Free
- Input Capacitance :
- 1.2nF
- Drain to Source Resistance :
- 3.7Ohm
- Resistance :
- 3.7Ohm
- Package / Case :
- TO-247-3
- Gate Charge (Qg) (Max) @ Vgs :
- 78nC @ 10V
- Datasheets
- IRFPF30PBF

N-Channel Tube 3.7Ohm @ 2.2A, 10V ±20V 1200pF @ 25V 78nC @ 10V 900V TO-247-3
IRFPF30PBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1200pF @ 25V.This device conducts a continuous drain current (ID) of 3.6A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 90 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 3.7Ohm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 14 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 900V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFPF30PBF Features
a continuous drain current (ID) of 3.6A
the turn-off delay time is 90 ns
single MOSFETs transistor is 3.7Ohm
a 900V drain to source voltage (Vdss)
IRFPF30PBF Applications
There are a lot of Vishay Siliconix
IRFPF30PBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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