IRFPF30PBF

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Mfr.Part #
IRFPF30PBF
Manufacturer
Vishay
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 900V 3.6A TO247-3
Stock
4,545
In Stock :
4,545

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Temperature :
-55°C~150°C TJ
Weight :
38.000013g
Continuous Drain Current (ID) :
3.6A
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1200pF @ 25V
Fall Time (Typ) :
30 ns
Number of Channels :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
125W Tc
Supplier Device Package :
TO-247-3
Min Operating Temperature :
-55°C
Turn On Delay Time :
14 ns
Turn-Off Delay Time :
90 ns
Rise Time :
25ns
Published :
2011
Max Operating Temperature :
150°C
Radiation Hardening :
No
FET Type :
N-Channel
Element Configuration :
Single
Rds On (Max) @ Id, Vgs :
3.7Ohm @ 2.2A, 10V
Factory Lead Time :
8 Weeks
Mounting Type :
Through Hole
Rds On Max :
3.7 Ω
Length :
15.87mm
Current - Continuous Drain (Id) @ 25°C :
3.6A Tc
Gate to Source Voltage (Vgs) :
20V
Mount :
Through Hole
Height :
20.7mm
Drain to Source Voltage (Vdss) :
900V
Number of Pins :
3
RoHS Status :
ROHS3 Compliant
Packaging :
Tube
Power Dissipation :
125W
Width :
5.31mm
Number of Elements :
1
Vgs(th) (Max) @ Id :
4V @ 250µA
Lead Free :
Lead Free
Input Capacitance :
1.2nF
Drain to Source Resistance :
3.7Ohm
Resistance :
3.7Ohm
Package / Case :
TO-247-3
Gate Charge (Qg) (Max) @ Vgs :
78nC @ 10V
Datasheets
IRFPF30PBF
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFPF30PBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Channels:1, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-247-3, IRFPF30PBF pinout, IRFPF30PBF datasheet PDF, IRFPF30PBF amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFPF30PBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFPF30PBF


N-Channel Tube 3.7Ohm @ 2.2A, 10V ±20V 1200pF @ 25V 78nC @ 10V 900V TO-247-3

IRFPF30PBF Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1200pF @ 25V.This device conducts a continuous drain current (ID) of 3.6A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 90 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 3.7Ohm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 14 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 900V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRFPF30PBF Features


a continuous drain current (ID) of 3.6A
the turn-off delay time is 90 ns
single MOSFETs transistor is 3.7Ohm
a 900V drain to source voltage (Vdss)


IRFPF30PBF Applications


There are a lot of Vishay Siliconix
IRFPF30PBF applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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