IRFPE50PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Turn-Off Delay Time :

120 ns

REACH SVHC :

Unknown

Mount :

Through Hole

Fall Time (Typ) :

39 ns

Turn On Delay Time :

19 ns

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Voltage - Rated DC :

800V

Threshold Voltage :

4V

Element Configuration :

Single

Max Operating Temperature :

150°C

Length :

15.87mm

Factory Lead Time :

8 Weeks

Lead Pitch :

5.45mm

Weight :

38.000013g

Nominal Vgs :

4 V

Dual Supply Voltage :

800V

Drain to Source Breakdown Voltage :

800V

Package / Case :

TO-247-3

Published :

2008

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

1.2Ohm @ 4.7A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

7.8A Tc

Current Rating :

7.8A

RoHS Status :

ROHS3 Compliant

Height :

20.7mm

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Packaging :

Tube

Continuous Drain Current (ID) :

7.8A

Supplier Device Package :

TO-247-3

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Resistance :

1.2Ohm

Drain to Source Voltage (Vdss) :

800V

Rise Time :

38ns

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Power Dissipation-Max :

190W Tc

Drain to Source Resistance :

1.2Ohm

Termination :

Through Hole

Rds On Max :

1.2 Ω

Width :

5.31mm

Radiation Hardening :

No

Vgs (Max) :

±20V

Number of Elements :

1

Recovery Time :

980 ns

Power Dissipation :

190W

Input Capacitance :

3.1nF

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole