IRFPE50
- Mfr.Part #
- IRFPE50
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 7.8A TO247-3
- Stock
- 2,053
- In Stock :
- 2,053
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 19 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 7.8A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-247-3
- Supplier Device Package :
- TO-247-3
- Input Capacitance :
- 3.1nF
- Max Operating Temperature :
- 150°C
- Weight :
- 38.000013g
- Drain to Source Breakdown Voltage :
- 800V
- Lead Free :
- Contains Lead
- Radiation Hardening :
- No
- Drain to Source Resistance :
- 1.2Ohm
- Number of Pins :
- 3
- Drain to Source Voltage (Vdss) :
- 800V
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- 7.8A
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- Width :
- 5.31mm
- REACH SVHC :
- Unknown
- Resistance :
- 1.2Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 3100pF @ 25V
- Published :
- 2015
- Rds On Max :
- 1.2 Ω
- Packaging :
- Tube
- Rise Time :
- 38ns
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 7.8A Tc
- Turn-Off Delay Time :
- 120 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Voltage - Rated DC :
- 800V
- Number of Channels :
- 1
- Mount :
- Through Hole
- Element Configuration :
- Single
- Power Dissipation-Max :
- 190W Tc
- Length :
- 15.87mm
- Fall Time (Typ) :
- 39 ns
- RoHS Status :
- Non-RoHS Compliant
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 1.2Ohm @ 4.7A, 10V
- Height :
- 20.7mm
- Min Operating Temperature :
- -55°C
- Datasheets
- IRFPE50

N-Channel Tube 1.2Ohm @ 4.7A, 10V ±20V 3100pF @ 25V 200nC @ 10V 800V TO-247-3
IRFPE50 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 7.8A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 800V, and this device has a drainage-to-source breakdown voltage of 800VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 120 ns.This device has a drain-to-source resistance of 1.2Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 19 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFPE50 Features
a continuous drain current (ID) of 7.8A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 120 ns
single MOSFETs transistor is 1.2Ohm
a 800V drain to source voltage (Vdss)
IRFPE50 Applications
There are a lot of Vishay Siliconix
IRFPE50 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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