IRFPE40
- Mfr.Part #
- IRFPE40
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 5.4A TO247-3
- Stock
- 16,364
- In Stock :
- 16,364
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Turn-Off Delay Time :
- 100 ns
- Mount :
- Through Hole
- Width :
- 5.31mm
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 5.4A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain-source On Resistance-Max :
- 2Ohm
- Drain to Source Breakdown Voltage :
- 800V
- Fall Time (Typ) :
- 32 ns
- JEDEC-95 Code :
- TO-247AC
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 16 ns
- Length :
- 15.87mm
- REACH SVHC :
- Unknown
- Power Dissipation-Max :
- 150W Tc
- Number of Terminations :
- 3
- FET Type :
- N-Channel
- Nominal Vgs :
- 4 V
- Avalanche Energy Rating (Eas) :
- 490 mJ
- Number of Elements :
- 1
- Number of Channels :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 22A
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Pbfree Code :
- No
- Number of Pins :
- 3
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 3.2A, 10V
- Threshold Voltage :
- 4V
- Rise Time :
- 36ns
- Height :
- 20.7mm
- RoHS Status :
- Non-RoHS Compliant
- Published :
- 2016
- Package / Case :
- TO-247-3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1900pF @ 25V
- Weight :
- 38.000013g
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 5.4A
- Transistor Application :
- SWITCHING
- Datasheets
- IRFPE40

N-Channel Tube 2 Ω @ 3.2A, 10V ±20V 1900pF @ 25V 130nC @ 10V TO-247-3
IRFPE40 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 490 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1900pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 5.4A amps.In this device, the drain-source breakdown voltage is 800V and VGS=800V, so the drain-source breakdown voltage is 800V in this case.It is [100 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 22A.A turn-on delay time of 16 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFPE40 Features
the avalanche energy rating (Eas) is 490 mJ
a continuous drain current (ID) of 5.4A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 22A.
a threshold voltage of 4V
IRFPE40 Applications
There are a lot of Vishay Siliconix
IRFPE40 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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