IRFPE30PBF
- Mfr.Part #
- IRFPE30PBF
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 4.1A TO247-3
- Stock
- 49,796
- In Stock :
- 49,796
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-247-3
- Factory Lead Time :
- 8 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Length :
- 15.87mm
- Weight :
- 38.000013g
- Power Dissipation :
- 125W
- Turn-Off Delay Time :
- 82 ns
- Packaging :
- Tube
- Mount :
- Through Hole
- Min Operating Temperature :
- -55°C
- Current - Continuous Drain (Id) @ 25°C :
- 4.1A Tc
- Vgs (Max) :
- ±20V
- Height :
- 20.7mm
- Rds On Max :
- 3 Ω
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Resistance :
- 3Ohm
- Continuous Drain Current (ID) :
- 4.1A
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2011
- Input Capacitance :
- 1.3nF
- Drain to Source Breakdown Voltage :
- 800V
- Width :
- 5.31mm
- Turn On Delay Time :
- 12 ns
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 33ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 78nC @ 10V
- Max Operating Temperature :
- 150°C
- Supplier Device Package :
- TO-247-3
- Drain to Source Voltage (Vdss) :
- 800V
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Fall Time (Typ) :
- 30 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300pF @ 25V
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 3Ohm @ 2.5A, 10V
- Power Dissipation-Max :
- 125W Tc
- Element Configuration :
- Single
- Number of Pins :
- 3
- Number of Channels :
- 1
- Datasheets
- IRFPE30PBF

N-Channel Tube 3Ohm @ 2.5A, 10V ±20V 1300pF @ 25V 78nC @ 10V 800V TO-247-3
IRFPE30PBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1300pF @ 25V.This device has a continuous drain current (ID) of [4.1A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=800V, the drain-source breakdown voltage is 800V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 82 ns.MOSFETs have 3Ohm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 800V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFPE30PBF Features
a continuous drain current (ID) of 4.1A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 82 ns
single MOSFETs transistor is 3Ohm
a 800V drain to source voltage (Vdss)
IRFPE30PBF Applications
There are a lot of Vishay Siliconix
IRFPE30PBF applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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