IRFPE30
- Mfr.Part #
- IRFPE30
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 4.1A TO247-3
- Stock
- 35,373
- In Stock :
- 35,373
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 5.31mm
- Number of Pins :
- 3
- Rise Time :
- 33ns
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±20V
- Weight :
- 38.000013g
- Current Rating :
- 4.1A
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Contains Lead
- Current - Continuous Drain (Id) @ 25°C :
- 4.1A Tc
- Continuous Drain Current (ID) :
- 4.1A
- Drain to Source Resistance :
- 3Ohm
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 800V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 82 ns
- Voltage - Rated DC :
- 800V
- Length :
- 15.87mm
- Rds On (Max) @ Id, Vgs :
- 3Ohm @ 2.5A, 10V
- Supplier Device Package :
- TO-247-3
- Element Configuration :
- Single
- Number of Channels :
- 1
- Turn On Delay Time :
- 12 ns
- Fall Time (Typ) :
- 30 ns
- Rds On Max :
- 3 Ω
- Height :
- 20.7mm
- Published :
- 2017
- RoHS Status :
- Non-RoHS Compliant
- Power Dissipation-Max :
- 125W Tc
- Max Operating Temperature :
- 150°C
- Input Capacitance :
- 1.3nF
- Package / Case :
- TO-247-3
- Min Operating Temperature :
- -55°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300pF @ 25V
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 78nC @ 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- IRFPE30

N-Channel Tube 3Ohm @ 2.5A, 10V ±20V 1300pF @ 25V 78nC @ 10V 800V TO-247-3
IRFPE30 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 4.1A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 82 ns.This device has a drain-to-source resistance of 3Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFPE30 Features
a continuous drain current (ID) of 4.1A
the turn-off delay time is 82 ns
single MOSFETs transistor is 3Ohm
a 800V drain to source voltage (Vdss)
IRFPE30 Applications
There are a lot of Vishay Siliconix
IRFPE30 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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