IRFPC60LCPBF
- Mfr.Part #
- IRFPC60LCPBF
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 16A TO247-3
- Stock
- 500
- In Stock :
- 500
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance :
- 3.5nF
- Fall Time (Typ) :
- 38 ns
- Number of Pins :
- 3
- Power Dissipation :
- 280W
- Threshold Voltage :
- 4V
- Vgs (Max) :
- ±30V
- Drain to Source Resistance :
- 400mOhm
- Max Operating Temperature :
- 150°C
- Continuous Drain Current (ID) :
- 16A
- Turn On Delay Time :
- 17 ns
- Supplier Device Package :
- TO-247-3
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Number of Channels :
- 1
- Weight :
- 38.000013g
- REACH SVHC :
- Unknown
- Gate Charge (Qg) (Max) @ Vgs :
- 120nC @ 10V
- Min Operating Temperature :
- -55°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 3500pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Nominal Vgs :
- 4 V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 600V
- Packaging :
- Tube
- Height :
- 20.7mm
- Factory Lead Time :
- 8 Weeks
- Rds On (Max) @ Id, Vgs :
- 400mOhm @ 9.6A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 280W Tc
- Rds On Max :
- 400 mΩ
- Drain to Source Voltage (Vdss) :
- 600V
- Package / Case :
- TO-247-3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rise Time :
- 57ns
- Length :
- 15.87mm
- Width :
- 5.31mm
- Published :
- 2011
- FET Type :
- N-Channel
- Resistance :
- 400mOhm
- Gate to Source Voltage (Vgs) :
- 30V
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 43 ns
- Datasheets
- IRFPC60LCPBF

N-Channel Tube 400mOhm @ 9.6A, 10V ±30V 3500pF @ 25V 120nC @ 10V 600V TO-247-3
IRFPC60LCPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 43 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 400mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 17 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFPC60LCPBF Features
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 43 ns
single MOSFETs transistor is 400mOhm
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
IRFPC60LCPBF Applications
There are a lot of Vishay Siliconix
IRFPC60LCPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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