IRFPC60
- Mfr.Part #
- IRFPC60
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 16A TO247-3
- Stock
- 7,959
- In Stock :
- 7,959
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 16A
- Mounting Type :
- Through Hole
- Package / Case :
- TO-247-3
- Min Operating Temperature :
- -55°C
- Voltage - Rated DC :
- 600V
- RoHS Status :
- Non-RoHS Compliant
- Drain to Source Breakdown Voltage :
- 600V
- Max Operating Temperature :
- 150°C
- Rds On Max :
- 400 mΩ
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Turn On Delay Time :
- 19 ns
- Drain to Source Voltage (Vdss) :
- 600V
- Number of Pins :
- 3
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 21 Weeks
- Lead Free :
- Contains Lead
- Length :
- 15.87mm
- Rds On (Max) @ Id, Vgs :
- 400mOhm @ 9.6A, 10V
- Weight :
- 38.000013g
- Mount :
- Through Hole
- Published :
- 1997
- Turn-Off Delay Time :
- 110 ns
- Number of Channels :
- 1
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 3900pF @ 25V
- Width :
- 5.31mm
- Power Dissipation-Max :
- 280W Tc
- Rise Time :
- 54ns
- Gate Charge (Qg) (Max) @ Vgs :
- 210nC @ 10V
- Height :
- 20.7mm
- Input Capacitance :
- 3.9nF
- Drain to Source Resistance :
- 400mOhm
- Fall Time (Typ) :
- 56 ns
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- Current Rating :
- 16A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- TO-247-3
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- IRFPC60

N-Channel Tube 400mOhm @ 9.6A, 10V ±20V 3900pF @ 25V 210nC @ 10V 600V TO-247-3
IRFPC60 Overview
The maximum input capacitance of this device is 3900pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 16A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 110 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 400mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 19 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRFPC60 Features
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 110 ns
single MOSFETs transistor is 400mOhm
a 600V drain to source voltage (Vdss)
IRFPC60 Applications
There are a lot of Vishay Siliconix
IRFPC60 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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