IRFPC50PBF
- Mfr.Part #
- IRFPC50PBF
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 11A TO247-3
- Stock
- 458
- In Stock :
- 458
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 11A
- Voltage - Rated DC :
- 600V
- Power Dissipation-Max :
- 180W Tc
- Number of Channels :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Threshold Voltage :
- 4V
- Width :
- 5.31mm
- Input Capacitance :
- 2.7nF
- Fall Time (Typ) :
- 36 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 37ns
- Rds On Max :
- 600 mΩ
- Package / Case :
- TO-247-3
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 10V
- Number of Elements :
- 1
- REACH SVHC :
- Unknown
- Published :
- 2016
- Mounting Type :
- Through Hole
- Recovery Time :
- 830 ns
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 600mOhm @ 6A, 10V
- FET Type :
- N-Channel
- Supplier Device Package :
- TO-247-3
- Max Operating Temperature :
- 150°C
- Drain to Source Resistance :
- 600mOhm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 88 ns
- Vgs (Max) :
- ±20V
- Packaging :
- Tube
- Weight :
- 38.000013g
- Factory Lead Time :
- 12 Weeks
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Power Dissipation :
- 180W
- Resistance :
- 600mOhm
- Length :
- 15.87mm
- Current Rating :
- 11A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Turn On Delay Time :
- 18 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2700pF @ 25V
- Drain to Source Breakdown Voltage :
- 600V
- Min Operating Temperature :
- -55°C
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Height :
- 20.7mm
- Drain to Source Voltage (Vdss) :
- 600V
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IRFPC50PBF

N-Channel Tube 600mOhm @ 6A, 10V ±20V 2700pF @ 25V 140nC @ 10V 600V TO-247-3
IRFPC50PBF Overview
A device's maximal input capacitance is 2700pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 11A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 88 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 600mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFPC50PBF Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 88 ns
single MOSFETs transistor is 600mOhm
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
IRFPC50PBF Applications
There are a lot of Vishay Siliconix
IRFPC50PBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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