IRFPC50LCPBF
- Mfr.Part #
- IRFPC50LCPBF
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 11A TO247-3
- Stock
- 3,837
- In Stock :
- 3,837
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Published :
- 2016
- Vgs (Max) :
- ±30V
- Width :
- 5.31mm
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- Min Operating Temperature :
- -55°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2300pF @ 25V
- Height :
- 20.7mm
- Power Dissipation-Max :
- 190W Tc
- Resistance :
- 600mOhm
- Gate Charge (Qg) (Max) @ Vgs :
- 84nC @ 10V
- Turn On Delay Time :
- 17 ns
- Package / Case :
- TO-247-3
- Radiation Hardening :
- No
- Number of Channels :
- 1
- Drain to Source Resistance :
- 600mOhm
- Input Capacitance :
- 2.3nF
- Supplier Device Package :
- TO-247-3
- Factory Lead Time :
- 8 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Max Operating Temperature :
- 150°C
- Rds On (Max) @ Id, Vgs :
- 600mOhm @ 6.6A, 10V
- Rds On Max :
- 600 mΩ
- Fall Time (Typ) :
- 26 ns
- Number of Elements :
- 1
- Weight :
- 38.000013g
- Drain to Source Voltage (Vdss) :
- 600V
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 11A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Turn-Off Delay Time :
- 41 ns
- Rise Time :
- 32ns
- Length :
- 15.87mm
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation :
- 190W
- Datasheets
- IRFPC50LCPBF

N-Channel Tube 600mOhm @ 6.6A, 10V ±30V 2300pF @ 25V 84nC @ 10V 600V TO-247-3
IRFPC50LCPBF Overview
The maximum input capacitance of this device is 2300pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 11A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 41 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 600mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 17 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRFPC50LCPBF Features
a continuous drain current (ID) of 11A
the turn-off delay time is 41 ns
single MOSFETs transistor is 600mOhm
a 600V drain to source voltage (Vdss)
IRFPC50LCPBF Applications
There are a lot of Vishay Siliconix
IRFPC50LCPBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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