IRFPC50A

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Mfr.Part #
IRFPC50A
Manufacturer
Vishay
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 11A TO247-3
Stock
4,776
In Stock :
4,776

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
180W Tc
Number of Channels :
1
Element Configuration :
Single
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Pins :
3
Vgs(th) (Max) @ Id :
4V @ 250µA
Package / Case :
TO-247-3
Fall Time (Typ) :
29 ns
Input Capacitance (Ciss) (Max) @ Vds :
2100pF @ 25V
Turn On Delay Time :
15 ns
RoHS Status :
Non-RoHS Compliant
Lead Free :
Contains Lead
Rds On Max :
580 mΩ
Operating Temperature :
-55°C~150°C TJ
Current Rating :
11A
Drain to Source Resistance :
580mOhm
Drain to Source Breakdown Voltage :
600V
Width :
5.31mm
Supplier Device Package :
TO-247-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
11A Tc
Weight :
38.000013g
Voltage - Rated DC :
600V
Rds On (Max) @ Id, Vgs :
580mOhm @ 6A, 10V
Mount :
Through Hole
Power Dissipation :
180W
Min Operating Temperature :
-55°C
Rise Time :
40ns
Continuous Drain Current (ID) :
11A
Drain to Source Voltage (Vdss) :
600V
Packaging :
Tube
Turn-Off Delay Time :
33 ns
Vgs (Max) :
±30V
Height :
20.7mm
Published :
2017
Gate to Source Voltage (Vgs) :
30V
Length :
15.87mm
Input Capacitance :
2.1nF
Mounting Type :
Through Hole
Max Operating Temperature :
150°C
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Datasheets
IRFPC50A
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFPC50A from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Number of Pins:3, Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, IRFPC50A pinout, IRFPC50A datasheet PDF, IRFPC50A amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFPC50A ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFPC50A


N-Channel Tube 580mOhm @ 6A, 10V ±30V 2100pF @ 25V 70nC @ 10V 600V TO-247-3

IRFPC50A Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2100pF @ 25V.This device conducts a continuous drain current (ID) of 11A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 33 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 580mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 15 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRFPC50A Features


a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 33 ns
single MOSFETs transistor is 580mOhm
a 600V drain to source voltage (Vdss)


IRFPC50A Applications


There are a lot of Vishay Siliconix
IRFPC50A applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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