IRFPC40PBF
- Mfr.Part #
- IRFPC40PBF
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 6.8A TO247-3
- Stock
- 500
- In Stock :
- 500
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Threshold Voltage :
- 4V
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 6.8A Tc
- Factory Lead Time :
- 8 Weeks
- Mount :
- Through Hole
- Power Dissipation :
- 150W
- Turn-Off Delay Time :
- 55 ns
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 150W Tc
- Width :
- 5.31mm
- Fall Time (Typ) :
- 20 ns
- Supplier Device Package :
- TO-247-3
- Vgs (Max) :
- ±20V
- Weight :
- 38.000013g
- Input Capacitance :
- 1.3nF
- Number of Pins :
- 3
- Recovery Time :
- 940 ns
- Drain to Source Breakdown Voltage :
- 600V
- Rds On Max :
- 1.2 Ω
- Number of Channels :
- 1
- Number of Elements :
- 1
- Height :
- 20.7mm
- Continuous Drain Current (ID) :
- 6.8A
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Mounting Type :
- Through Hole
- Package / Case :
- TO-247-3
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 1.2Ohm @ 4.1A, 10V
- Nominal Vgs :
- 4 V
- Published :
- 2016
- Drain to Source Voltage (Vdss) :
- 600V
- Length :
- 15.87mm
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300pF @ 25V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rise Time :
- 18ns
- Drain to Source Resistance :
- 1.2Ohm
- FET Type :
- N-Channel
- Turn On Delay Time :
- 13 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Resistance :
- 1.2Ohm
- Gate to Source Voltage (Vgs) :
- 20V
- Min Operating Temperature :
- -55°C
- REACH SVHC :
- Unknown
- Max Operating Temperature :
- 150°C
- Datasheets
- IRFPC40PBF

N-Channel Tube 1.2Ohm @ 4.1A, 10V ±20V 1300pF @ 25V 60nC @ 10V 600V TO-247-3
IRFPC40PBF Overview
A device's maximal input capacitance is 1300pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 6.8A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 55 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 1.2Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFPC40PBF Features
a continuous drain current (ID) of 6.8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 55 ns
single MOSFETs transistor is 1.2Ohm
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
IRFPC40PBF Applications
There are a lot of Vishay Siliconix
IRFPC40PBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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