IRFP9140N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

76A

Power Dissipation-Max :

140W Tc

Rds On (Max) @ Id, Vgs :

117m Ω @ 13A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

P-Channel

Mounting Type :

Through Hole

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.117Ohm

Surface Mount :

No

Case Connection :

DRAIN

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

100V

Drain Current-Max (Abs) (ID) :

23A

Additional Feature :

AVALANCHE RATED, FAST SWITCHING

ECCN Code :

EAR99

JEDEC-95 Code :

TO-247AC

Published :

1998

Drain to Source Voltage (Vdss) :

100V

RoHS Status :

Non-RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Avalanche Energy Rating (Eas) :

430 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

97nC @ 10V

Transistor Application :

SWITCHING

Package / Case :

TO-247-3

Packaging :

Bulk

Transistor Element Material :

SILICON

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED