IRFP90N20DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Dual Supply Voltage :

200V

Turn On Delay Time :

23 ns

Mounting Type :

Through Hole

Power Dissipation :

580W

Length :

15.875mm

Height :

20.3mm

Radiation Hardening :

No

Package / Case :

TO-247-3

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Threshold Voltage :

5V

Continuous Drain Current (ID) :

94A

Factory Lead Time :

12 Weeks

Number of Channels :

1

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

30

Input Capacitance (Ciss) (Max) @ Vds :

6040pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

94A Tc

Drain to Source Breakdown Voltage :

200V

Case Connection :

DRAIN

Width :

5.3mm

Drain Current-Max (Abs) (ID) :

90A

Peak Reflow Temperature (Cel) :

250

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

MATTE TIN OVER NICKEL

FET Type :

N-Channel

JEDEC-95 Code :

TO-247AC

Gate to Source Voltage (Vgs) :

30V

Resistance :

23mOhm

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

5 V

Power Dissipation-Max :

580W Tc

Rise Time :

160ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Packaging :

Bulk

Element Configuration :

Single

Number of Elements :

1

Turn-Off Delay Time :

43 ns

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Voltage - Rated DC :

200V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

5V @ 250μA

REACH SVHC :

No SVHC

Published :

2001

Transistor Element Material :

SILICON

Series :

HEXFET®

Number of Terminations :

3

Current Rating :

94A

Fall Time (Typ) :

79 ns

Gate Charge (Qg) (Max) @ Vgs :

270nC @ 10V

Recovery Time :

340 ns

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

23m Ω @ 56A, 10V