IRFP7718PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Factory Lead Time :

12 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Series :

HEXFET®, StrongIRFET™

Gate Charge (Qg) (Max) @ Vgs :

830nC @ 10V

Length :

15.87mm

Packaging :

Tube

Power Dissipation-Max :

517W Tc

Height :

20.7mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

5.31mm

FET Type :

N-Channel

Package / Case :

TO-247-3

Rds On (Max) @ Id, Vgs :

1.8m Ω @ 100A, 10V

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-247AC

Turn On Delay Time :

58 ns

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

3.7V @ 250μA

Number of Terminations :

3

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Power Dissipation :

517W

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

29550pF @ 25V

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

195A

Mounting Type :

Through Hole

Fall Time (Typ) :

160 ns

Number of Elements :

1

DS Breakdown Voltage-Min :

75V

Published :

2013

Drain to Source Voltage (Vdss) :

75V

Turn-Off Delay Time :

266 ns

Avalanche Energy Rating (Eas) :

2004 mJ

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Lead Free :

Lead Free

Rise Time :

164ns

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1