IRFP4868PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

24 ns

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

32m Ω @ 42A, 10V

Published :

2012

Element Configuration :

Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Packaging :

Tube

Power Dissipation :

517W

Lead Free :

Lead Free

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

270nC @ 10V

FET Type :

N-Channel

Length :

15.87mm

Factory Lead Time :

12 Weeks

Number of Terminations :

3

Rise Time :

16ns

Power Dissipation-Max :

517W Tc

Continuous Drain Current (ID) :

70A

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Width :

5.31mm

ECCN Code :

EAR99

Radiation Hardening :

No

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

280A

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

70A Tc

JEDEC-95 Code :

TO-247AC

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

45 ns

Recovery Time :

351 ns

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

300V

Turn-Off Delay Time :

62 ns

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-247-3

Threshold Voltage :

3V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Junction Temperature (Tj) :

175°C

Resistance :

32mOhm

Mount :

Through Hole

Height :

24.99mm

Input Capacitance (Ciss) (Max) @ Vds :

10774pF @ 50V

Number of Elements :

1