IRFP4868PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

270nC @ 10V

Resistance :

32mOhm

JEDEC-95 Code :

TO-247AC

Rise Time :

16ns

Drain to Source Breakdown Voltage :

300V

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Package / Case :

TO-247-3

Max Junction Temperature (Tj) :

175°C

Height :

24.99mm

Input Capacitance (Ciss) (Max) @ Vds :

10774pF @ 50V

Transistor Element Material :

SILICON

Mount :

Through Hole

Transistor Application :

SWITCHING

Recovery Time :

351 ns

Mounting Type :

Through Hole

Number of Pins :

3

Power Dissipation-Max :

517W Tc

ECCN Code :

EAR99

Turn On Delay Time :

24 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

70A

Power Dissipation :

517W

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

280A

Vgs(th) (Max) @ Id :

5V @ 250μA

Length :

15.87mm

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

62 ns

Radiation Hardening :

No

Threshold Voltage :

3V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Published :

2012

Factory Lead Time :

12 Weeks

Number of Channels :

1

Lead Free :

Lead Free

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

45 ns

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

32m Ω @ 42A, 10V

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Width :

5.31mm