IRFP4768PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

15.87mm

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Resistance :

17.5mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Mount :

Through Hole

Series :

HEXFET®

Published :

2009

Dual Supply Voltage :

250V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Turn-Off Delay Time :

57 ns

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

93A Tc

Number of Pins :

3

Turn On Delay Time :

36 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Factory Lead Time :

12 Weeks

Rise Time :

160ns

Width :

5.3086mm

Power Dissipation-Max :

520W Tc

Contact Plating :

Tin

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Radiation Hardening :

No

Continuous Drain Current (ID) :

93A

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-247AC

Drain to Source Breakdown Voltage :

250V

Avalanche Energy Rating (Eas) :

770 mJ

Packaging :

Tube

Power Dissipation :

520W

Transistor Element Material :

SILICON

Nominal Vgs :

5 V

RoHS Status :

ROHS3 Compliant

Termination :

Through Hole

Element Configuration :

Single

Threshold Voltage :

5V

Rds On (Max) @ Id, Vgs :

17.5m Ω @ 56A, 10V

Gate Charge (Qg) (Max) @ Vgs :

270nC @ 10V

Lead Free :

Lead Free

Number of Terminations :

3

FET Type :

N-Channel

Fall Time (Typ) :

110 ns

Height :

20.7mm

Package / Case :

TO-247-3

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

10880pF @ 50V

Operating Mode :

ENHANCEMENT MODE