IRFP4710PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

15.875mm

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Turn On Delay Time :

35 ns

Published :

2002

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

14m Ω @ 45A, 10V

Factory Lead Time :

12 Weeks

Lead Free :

Lead Free

Continuous Drain Current (ID) :

72A

Power Dissipation-Max :

190W Tc

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Power Dissipation :

190W

Input Capacitance (Ciss) (Max) @ Vds :

6160pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Resistance :

14Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Radiation Hardening :

No

Recovery Time :

110 ns

Width :

5.3mm

Fall Time (Typ) :

38 ns

Height :

20.2946mm

Drain to Source Breakdown Voltage :

100V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Turn-Off Delay Time :

41 ns

Nominal Vgs :

5.5 V

Series :

HEXFET®

Mounting Type :

Through Hole

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Voltage - Rated DC :

100V

Number of Pins :

3

Number of Terminations :

3

REACH SVHC :

No SVHC

JEDEC-95 Code :

TO-247AC

Current Rating :

72A

Packaging :

Tube

Rise Time :

130ns

Vgs (Max) :

±20V

Number of Elements :

1

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

72A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-247-3

Dual Supply Voltage :

100V

Threshold Voltage :

5.5V

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V