IRFP4668PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

9.7m Ω @ 81A, 10V

Nominal Vgs :

5 V

Rise Time :

105ns

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Dual Supply Voltage :

200V

Length :

15.87mm

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Through Hole

Power Dissipation :

520W

Lead Free :

Lead Free

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

520A

Package / Case :

TO-247-3

Max Junction Temperature (Tj) :

175°C

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

200V

Termination :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

10720pF @ 50V

Avalanche Energy Rating (Eas) :

760 mJ

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Number of Channels :

1

Threshold Voltage :

5V

Turn-Off Delay Time :

64 ns

Series :

HEXFET®

Mount :

Through Hole

Vgs (Max) :

±30V

Packaging :

Tube

JEDEC-95 Code :

TO-247AC

Turn On Delay Time :

41 ns

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

241nC @ 10V

Resistance :

9.7mOhm

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

250

Element Configuration :

Single

Published :

2008

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation-Max :

520W Tc

Height :

24.99mm

Continuous Drain Current (ID) :

130A

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

5.3086mm

Number of Elements :

1

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

30

Fall Time (Typ) :

74 ns