IRFP460NPBF
- Mfr.Part #
- IRFP460NPBF
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 20A TO247-3
- Stock
- 27,667
- In Stock :
- 27,667
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3540pF @ 25V
- Threshold Voltage :
- 5V
- Power Dissipation-Max :
- 280W Tc
- Min Operating Temperature :
- -55°C
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 20A
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Fall Time (Typ) :
- 33 ns
- Height :
- 20.7mm
- Supplier Device Package :
- TO-247-3
- Weight :
- 38.000013g
- Rds On (Max) @ Id, Vgs :
- 240mOhm @ 12A, 10V
- Input Capacitance :
- 3.54nF
- Drain to Source Breakdown Voltage :
- 500V
- Package / Case :
- TO-247-3
- Length :
- 15.87mm
- Drain to Source Voltage (Vdss) :
- 500V
- FET Type :
- N-Channel
- Packaging :
- Tube
- Turn-Off Delay Time :
- 34 ns
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 124nC @ 10V
- Drain to Source Resistance :
- 240mOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2009
- Number of Channels :
- 1
- Mounting Type :
- Through Hole
- REACH SVHC :
- Unknown
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Max Operating Temperature :
- 150°C
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 5.31mm
- Turn On Delay Time :
- 23 ns
- Rise Time :
- 87ns
- Rds On Max :
- 240 mΩ
- Datasheets
- IRFP460NPBF

N-Channel Tube 240mOhm @ 12A, 10V ±30V 3540pF @ 25V 124nC @ 10V 500V TO-247-3
IRFP460NPBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3540pF @ 25V.This device has a continuous drain current (ID) of [20A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 34 ns.MOSFETs have 240mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 23 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFP460NPBF Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 34 ns
single MOSFETs transistor is 240mOhm
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)
IRFP460NPBF Applications
There are a lot of Vishay Siliconix
IRFP460NPBF applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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