IRFP460C

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Mfr.Part #
IRFP460C
Manufacturer
onsemi
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 500V 20A TO3P
Stock
20,587
In Stock :
20,587

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
4V @ 250µA
JESD-30 Code :
R-PSFM-T3
Terminal Position :
Single
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Surface Mount :
No
Pulsed Drain Current-Max (IDM) :
80A
Terminal Finish :
MATTE TIN
Package / Case :
TO-3P-3, SC-65-3
Operating Mode :
ENHANCEMENT MODE
DS Breakdown Voltage-Min :
500V
Number of Terminations :
3
Drain-source On Resistance-Max :
0.24Ohm
Number of Elements :
1
Drain Current-Max (Abs) (ID) :
20A
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
Power Dissipation-Max :
235W Tc
Peak Reflow Temperature (Cel) :
Not Applicable
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Qualification Status :
COMMERCIAL
Configuration :
SINGLE WITH BUILT-IN DIODE
Current - Continuous Drain (Id) @ 25°C :
20A Tc
Rds On (Max) @ Id, Vgs :
240m Ω @ 10A, 10V
Avalanche Energy Rating (Eas) :
1050 mJ
Transistor Application :
SWITCHING
Pin Count :
3
Gate Charge (Qg) (Max) @ Vgs :
170nC @ 10V
Reach Compliance Code :
Unknown
Mounting Type :
Through Hole
Drain to Source Voltage (Vdss) :
500V
Vgs (Max) :
±30V
Pbfree Code :
yes
Packaging :
Tube
Operating Temperature :
-55°C~150°C TJ
Input Capacitance (Ciss) (Max) @ Vds :
6pF @ 25V
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Datasheets
IRFP460C
Introducing Transistors - FETs, MOSFETs - Single onsemi IRFP460C from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-3P-3, SC-65-3, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IRFP460C pinout, IRFP460C datasheet PDF, IRFP460C amp .Beyond Transistors - FETs, MOSFETs - Single onsemi IRFP460C ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi IRFP460C


N-Channel Tube 240m Ω @ 10A, 10V ±30V 6pF @ 25V 170nC @ 10V 500V TO-3P-3, SC-65-3

IRFP460C Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1050 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 20A.There is a peak drain current of 80A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 500V, it should remain above the 500V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFP460C Features


the avalanche energy rating (Eas) is 1050 mJ
based on its rated peak drain current 80A.
a 500V drain to source voltage (Vdss)


IRFP460C Applications


There are a lot of Rochester Electronics, LLC
IRFP460C applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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