IRFP460C
- Mfr.Part #
- IRFP460C
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 20A TO3P
- Stock
- 20,587
- In Stock :
- 20,587
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- JESD-30 Code :
- R-PSFM-T3
- Terminal Position :
- Single
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Surface Mount :
- No
- Pulsed Drain Current-Max (IDM) :
- 80A
- Terminal Finish :
- MATTE TIN
- Package / Case :
- TO-3P-3, SC-65-3
- Operating Mode :
- ENHANCEMENT MODE
- DS Breakdown Voltage-Min :
- 500V
- Number of Terminations :
- 3
- Drain-source On Resistance-Max :
- 0.24Ohm
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 20A
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 235W Tc
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Qualification Status :
- COMMERCIAL
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Rds On (Max) @ Id, Vgs :
- 240m Ω @ 10A, 10V
- Avalanche Energy Rating (Eas) :
- 1050 mJ
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Reach Compliance Code :
- Unknown
- Mounting Type :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 500V
- Vgs (Max) :
- ±30V
- Pbfree Code :
- yes
- Packaging :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 6pF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Datasheets
- IRFP460C

N-Channel Tube 240m Ω @ 10A, 10V ±30V 6pF @ 25V 170nC @ 10V 500V TO-3P-3, SC-65-3
IRFP460C Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1050 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 20A.There is a peak drain current of 80A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 500V, it should remain above the 500V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFP460C Features
the avalanche energy rating (Eas) is 1050 mJ
based on its rated peak drain current 80A.
a 500V drain to source voltage (Vdss)
IRFP460C Applications
There are a lot of Rochester Electronics, LLC
IRFP460C applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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