IRFP450B
- Mfr.Part #
- IRFP450B
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 14A TO3P
- Stock
- 45,022
- In Stock :
- 45,022
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Drain to Source Voltage (Vdss) :
- 500V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 205W Tc
- Vgs (Max) :
- ±30V
- Gate Charge (Qg) (Max) @ Vgs :
- 113nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- TO-3P
- Published :
- 2001
- Input Capacitance (Ciss) (Max) @ Vds :
- 3800pF @ 25V
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 390mOhm @ 7A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-3P-3, SC-65-3
- Packaging :
- Tube
- Datasheets
- IRFP450B

N-Channel Tube 390mOhm @ 7A, 10V ±30V 3800pF @ 25V 113nC @ 10V 500V TO-3P-3, SC-65-3
IRFP450B Description
These N-channel enhanced mode power field effect transistors IRFP450B are produced using Fairchild's proprietary planar DMOS technology.
This advanced technology is tailor-made to minimize on-resistance, provides superior switching performance, and withstands high-energy pulses in avalanche and rectifier modes. These devices are very suitable for high frequency switching power supplies, power factor correction and half-bridge-based electronic lamp ballasts.
IRFP450B Features
·14A,500VRpS(on)=0.39Ω@VGs=10V.Low gate charge(tvpical 87 nC)·Low Crss(typical 60pF).Fast switching
· 100% avalanche tested·Improved dvidt capability
IRFP450B Applications
high frequency switching power supplies
power factor correction
half-bridge-based electronic lamp ballasts.
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