IRFP450APBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

4V

Lead Free :

Lead Free

Rise Time :

36ns

Power Dissipation :

190W

Turn On Delay Time :

15 ns

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

35 ns

Input Capacitance (Ciss) (Max) @ Vds :

2038pF @ 25V

Avalanche Energy Rating (Eas) :

760 mJ

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Mounting Type :

Through Hole

Published :

2008

Operating Temperature :

-55°C~150°C TJ

Current Rating :

14A

Rds On (Max) @ Id, Vgs :

400m Ω @ 8.4A, 10V

Nominal Vgs :

4 V

Continuous Drain Current (ID) :

14A

Width :

5.31mm

Vgs (Max) :

±30V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

56A

Resistance :

400mOhm

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Mount :

Through Hole

Number of Elements :

1

Power Dissipation-Max :

190W Tc

Terminal Finish :

MATTE TIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-247-3

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Number of Channels :

1

Weight :

38.000013g

Height :

20.7mm

Transistor Element Material :

SILICON

Number of Pins :

3

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

500V

Number of Terminations :

3

Length :

15.87mm

REACH SVHC :

Unknown

Factory Lead Time :

12 Weeks

JESD-609 Code :

e3

Pin Count :

3

Packaging :

Tube

Fall Time (Typ) :

29 ns

Gate to Source Voltage (Vgs) :

30V

Voltage - Rated DC :

500V