IRFP448
- Mfr.Part #
- IRFP448
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 11A TO247-3
- Stock
- 25,418
- In Stock :
- 25,418
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Operating Temperature :
- 150°C
- Mount :
- Through Hole
- Weight :
- 38.000013g
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Vgs (Max) :
- ±20V
- Radiation Hardening :
- No
- Drain to Source Resistance :
- 600mOhm
- Published :
- 2012
- FET Type :
- N-Channel
- Min Operating Temperature :
- -55°C
- Fall Time (Typ) :
- 32 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Element Configuration :
- Single
- Package / Case :
- TO-247-3
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 18 ns
- Mounting Type :
- Through Hole
- Input Capacitance :
- 1.9nF
- Rds On (Max) @ Id, Vgs :
- 600mOhm @ 6.6A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 84nC @ 10V
- Number of Pins :
- 3
- Supplier Device Package :
- TO-247-3
- Number of Channels :
- 1
- Power Dissipation-Max :
- 180W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Width :
- 5.31mm
- Rds On Max :
- 600 mΩ
- Height :
- 20.7mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1900pF @ 25V
- Continuous Drain Current (ID) :
- 11A
- Length :
- 15.87mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 40ns
- Drain to Source Voltage (Vdss) :
- 500V
- RoHS Status :
- Non-RoHS Compliant
- Turn-Off Delay Time :
- 62 ns
- Packaging :
- Tube
- Datasheets
- IRFP448

N-Channel Tube 600mOhm @ 6.6A, 10V ±20V 1900pF @ 25V 84nC @ 10V 500V TO-247-3
IRFP448 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1900pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 11A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 62 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 600mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 18 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRFP448 Features
a continuous drain current (ID) of 11A
the turn-off delay time is 62 ns
single MOSFETs transistor is 600mOhm
a 500V drain to source voltage (Vdss)
IRFP448 Applications
There are a lot of Vishay Siliconix
IRFP448 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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