IRFP4410ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

20.7mm

Dual Supply Voltage :

100V

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

57 ns

Series :

HEXFET®

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

230W Tc

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

242 mJ

Packaging :

Bulk

Recovery Time :

57 ns

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Nominal Vgs :

4 V

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

97A

Threshold Voltage :

4V

Number of Elements :

1

Factory Lead Time :

10 Weeks

Radiation Hardening :

No

FET Type :

N-Channel

Termination :

Through Hole

Package / Case :

TO-247-3

Drain to Source Breakdown Voltage :

100V

Rds On (Max) @ Id, Vgs :

9m Ω @ 58A, 10V

Drain-source On Resistance-Max :

0.009Ohm

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 150μA

JEDEC-95 Code :

TO-247AC

Turn On Delay Time :

16 ns

Case Connection :

DRAIN

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

4820pF @ 50V

ECCN Code :

EAR99

Rise Time :

52ns

Published :

2004

Lead Free :

Lead Free

Number of Pins :

3

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

REACH SVHC :

No SVHC

Length :

15.87mm

Width :

5.3086mm

Turn-Off Delay Time :

43 ns

Current - Continuous Drain (Id) @ 25°C :

97A Tc

Power Dissipation :

230W