IRFP440
- Mfr.Part #
- IRFP440
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 8.8A TO247-3
- Stock
- 2,457
- In Stock :
- 2,457
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-247-3
- Pulsed Drain Current-Max (IDM) :
- 34A
- Operating Mode :
- ENHANCEMENT MODE
- Surface Mount :
- No
- DS Breakdown Voltage-Min :
- 500V
- Qualification Status :
- COMMERCIAL
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Drain-source On Resistance-Max :
- 0.8Ohm
- Avalanche Energy Rating (Eas) :
- 320 mJ
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 850m Ω @ 5.3A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- MATTE TIN
- Current - Continuous Drain (Id) @ 25°C :
- 8.8A Tc
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 63nC @ 10V
- Reach Compliance Code :
- Unknown
- RoHS Status :
- Non-RoHS Compliant
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain Current-Max (Abs) (ID) :
- 8.5A
- JESD-30 Code :
- R-PSFM-T3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.3pF @ 25V
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 500V
- Terminal Position :
- Single
- JESD-609 Code :
- e3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Power Dissipation-Max :
- 150W Tc
- Datasheets
- IRFP440

N-Channel 850m Ω @ 5.3A, 10V ±20V 1.3pF @ 25V 63nC @ 10V 500V TO-247-3
IRFP440 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 320 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1.3pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 8.5A.Pulsed drain current is maximum rated peak drain current 34A.A normal operation of the DS requires keeping the breakdown voltage above 500V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFP440 Features
the avalanche energy rating (Eas) is 320 mJ
based on its rated peak drain current 34A.
a 500V drain to source voltage (Vdss)
IRFP440 Applications
There are a lot of Rochester Electronics, LLC
IRFP440 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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