IRFP4332PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

33m Ω @ 35A, 10V

Lead Free :

Lead Free

Series :

HEXFET®

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Dual Supply Voltage :

250V

Vgs(th) (Max) @ Id :

5V @ 250μA

Factory Lead Time :

12 Weeks

Package / Case :

TO-247-3

Height :

20.3mm

Resistance :

33mOhm

Current - Continuous Drain (Id) @ 25°C :

57A Tc

Width :

5.3mm

Length :

15.875mm

Input Capacitance (Ciss) (Max) @ Vds :

5860pF @ 25V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

250V

Number of Elements :

1

Number of Pins :

3

JEDEC-95 Code :

TO-247AC

Continuous Drain Current (ID) :

57A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

30V

Termination :

Through Hole

Operating Temperature :

-40°C~175°C TJ

Transistor Application :

SWITCHING

Voltage - Rated DC :

250V

Additional Feature :

ULTRA LOW ON-RESISTANCE

Current Rating :

57A

Contact Plating :

Tin

Vgs (Max) :

±30V

Published :

2006

Nominal Vgs :

5 V

Element Configuration :

Single

Mounting Type :

Through Hole

FET Type :

N-Channel

ECCN Code :

EAR99

Mount :

Through Hole

Power Dissipation-Max :

360W Tc

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

5V

REACH SVHC :

No SVHC

Power Dissipation :

120mW

Recovery Time :

290 ns