IRFP4321PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

150V

Height :

20.3mm

Drain to Source Breakdown Voltage :

150V

Current - Continuous Drain (Id) @ 25°C :

78A Tc

Continuous Drain Current (ID) :

78A

Termination :

Through Hole

Series :

HEXFET®

Turn-Off Delay Time :

25 ns

REACH SVHC :

No SVHC

Resistance :

15.5MOhm

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Rise Time :

60ns

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

5.3mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Package / Case :

TO-247-3

Lead Free :

Lead Free

Length :

15.875mm

Mount :

Through Hole

Recovery Time :

130 ns

Threshold Voltage :

5V

Power Dissipation :

310mW

Input Capacitance :

4.46nF

FET Type :

N-Channel

Dual Supply Voltage :

150V

Fall Time (Typ) :

35 ns

Factory Lead Time :

12 Weeks

Mounting Type :

Through Hole

Min Operating Temperature :

-55°C

Published :

2006

Supplier Device Package :

TO-247AC

Vgs(th) (Max) @ Id :

5V @ 250μA

Voltage - Rated DC :

150V

Input Capacitance (Ciss) (Max) @ Vds :

4460pF @ 25V

Max Operating Temperature :

175°C

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±30V

Number of Pins :

3

Nominal Vgs :

5 V

Rds On Max :

15.5 mΩ

Rds On (Max) @ Id, Vgs :

15.5mOhm @ 33A, 10V

Packaging :

Tube

Power Dissipation-Max :

310W Tc

Current Rating :

78A

Drain to Source Resistance :

15.5MOhm

Turn On Delay Time :

18 ns

Radiation Hardening :

No