IRFP4310ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Number of Terminations :

3

JEDEC-95 Code :

TO-247AC

Package / Case :

TO-247-3

Height :

20.7mm

FET Type :

N-Channel

Dual Supply Voltage :

100V

Power Dissipation-Max :

280W Tc

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

20 ns

Length :

15.87mm

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

6860pF @ 50V

REACH SVHC :

No SVHC

Threshold Voltage :

4V

Transistor Element Material :

SILICON

Rise Time :

60ns

ECCN Code :

EAR99

Number of Elements :

1

Width :

5.3086mm

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Power Dissipation :

280W

Element Configuration :

Single

Turn-Off Delay Time :

55 ns

Nominal Vgs :

4 V

Case Connection :

DRAIN

Packaging :

Bulk

Resistance :

6mOhm

Factory Lead Time :

12 Weeks

Fall Time (Typ) :

57 ns

Recovery Time :

40 ns

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Pulsed Drain Current-Max (IDM) :

560A

Termination :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 150μA

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

134A

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

6m Ω @ 75A, 10V

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

100V

Lead Free :

Lead Free

Published :

2004

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®