IRFP4229PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Published :

2006

Turn On Delay Time :

25 ns

Case Connection :

DRAIN

Vgs (Max) :

±30V

Rise Time :

27ns

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

30V

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

46m Ω @ 26A, 10V

Lead Free :

Lead Free

Termination :

Through Hole

Element Configuration :

Single

Transistor Application :

SWITCHING

Power Dissipation :

310mW

Number of Elements :

1

JEDEC-95 Code :

TO-247AC

REACH SVHC :

No SVHC

Packaging :

Tube

Operating Temperature :

-40°C~175°C TJ

Nominal Vgs :

5 V

Drain to Source Breakdown Voltage :

250V

Transistor Element Material :

SILICON

Package / Case :

TO-247-3

Dual Supply Voltage :

250V

Continuous Drain Current (ID) :

44A

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Height :

20.7mm

Recovery Time :

290 ns

Power Dissipation-Max :

310W Tc

Number of Terminations :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Length :

15.87mm

Mounting Type :

Through Hole

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

4560pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

44 ns

Resistance :

46mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

HEXFET®

Width :

5.3086mm

Threshold Voltage :

5V

Fall Time (Typ) :

19 ns