IRFP4227PBF
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- Mfr.Part #
- IRFP4227PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 65A TO247AC
- Stock
- 405,550
- In Stock ：
- 405,550
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Resistance :
- 25mOhm
- JEDEC-95 Code :
- TO-247AC
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 4600pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 98nC @ 10V
- Published :
- 2007
- Turn On Delay Time :
- 33 ns
- Drain to Source Breakdown Voltage :
- 200V
- Turn-Off Delay Time :
- 21 ns
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Nominal Vgs :
- 5 V
- Factory Lead Time :
- 12 Weeks
- Power Dissipation-Max :
- 330W Tc
- Pulsed Drain Current-Max (IDM) :
- 260A
- Continuous Drain Current (ID) :
- 65A
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Dual Supply Voltage :
- 240V
- Vgs (Max) :
- ±30V
- Number of Terminations :
- 3
- Termination :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 65A Tc
- Element Configuration :
- Single
- Additional Feature :
- FAST SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Threshold Voltage :
- 5V
- Height :
- 20.7mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Case Connection :
- DRAIN
- Length :
- 15.87mm
- Package / Case :
- TO-247-3
- Rds On (Max) @ Id, Vgs :
- 25m Ω @ 46A, 10V
- REACH SVHC :
- No SVHC
- Fall Time (Typ) :
- 31 ns
- Packaging :
- Tube
- Mount :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 30V
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Width :
- 5.3086mm
- Transistor Application :
- SWITCHING
- Recovery Time :
- 150 ns
- Power Dissipation :
- 330W
- Rise Time :
- 20ns
- Series :
- HEXFET®
- Operating Temperature :
- -40°C~175°C TJ
- Datasheets
- IRFP4227PBF
N-Channel Tube 25m Ω @ 46A, 10V ±30V 4600pF @ 25V 98nC @ 10V TO-247-3
IRFP4227PBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4600pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 65A amps.In this device, the drain-source breakdown voltage is 200V and VGS=200V, so the drain-source breakdown voltage is 200V in this case.It is [21 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 260A.A turn-on delay time of 33 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 5V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFP4227PBF Features
a continuous drain current (ID) of 65A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 21 ns
based on its rated peak drain current 260A.
a threshold voltage of 5V
IRFP4227PBF Applications
There are a lot of Infineon Technologies
IRFP4227PBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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