IRFP4227PBF
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- Mfr.Part #
- IRFP4227PBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IRFP4227 - 12V-300V N-CHANNEL PO
- Stock
- 405,550
- In Stock ：
- 405,550
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 4600pF @ 25V
- Drain to Source Breakdown Voltage :
- 200V
- Series :
- HEXFET®
- Mount :
- Through Hole
- Power Dissipation :
- 330W
- Case Connection :
- DRAIN
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Rise Time :
- 20ns
- Additional Feature :
- FAST SWITCHING
- Threshold Voltage :
- 5V
- Height :
- 20.7mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 12 Weeks
- Vgs (Max) :
- ±30V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 330W Tc
- JEDEC-95 Code :
- TO-247AC
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Turn On Delay Time :
- 33 ns
- Current - Continuous Drain (Id) @ 25°C :
- 65A Tc
- Recovery Time :
- 150 ns
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 65A
- Operating Temperature :
- -40°C~175°C TJ
- Fall Time (Typ) :
- 31 ns
- Published :
- 2007
- Resistance :
- 25mOhm
- Termination :
- Through Hole
- Packaging :
- Tube
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 98nC @ 10V
- Length :
- 15.87mm
- Transistor Element Material :
- SILICON
- Width :
- 5.3086mm
- Element Configuration :
- Single
- Nominal Vgs :
- 5 V
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 25m Ω @ 46A, 10V
- Dual Supply Voltage :
- 240V
- Package / Case :
- TO-247-3
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Pulsed Drain Current-Max (IDM) :
- 260A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 21 ns
- Datasheets
- IRFP4227PBF
N-Channel Tube 25m Ω @ 46A, 10V ±30V 4600pF @ 25V 98nC @ 10V TO-247-3
IRFP4227PBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4600pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 65A amps.In this device, the drain-source breakdown voltage is 200V and VGS=200V, so the drain-source breakdown voltage is 200V in this case.It is [21 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 260A.A turn-on delay time of 33 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 5V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFP4227PBF Features
a continuous drain current (ID) of 65A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 21 ns
based on its rated peak drain current 260A.
a threshold voltage of 5V
IRFP4227PBF Applications
There are a lot of Infineon Technologies
IRFP4227PBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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