IRFP4137PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

23ns

Width :

5.31mm

Power Dissipation-Max :

341W Tc

Radiation Hardening :

No

Power Dissipation :

341W

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

300V

FET Type :

N-Channel

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

125nC @ 10V

Number of Elements :

1

Package / Case :

TO-247-3

Current - Continuous Drain (Id) @ 25°C :

38A Tc

Lead Free :

Lead Free

Threshold Voltage :

3V

REACH SVHC :

No SVHC

Published :

2008

Mount :

Through Hole

Resistance :

69mOhm

Rds On (Max) @ Id, Vgs :

69m Ω @ 24A, 10V

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

5168pF @ 50V

Vgs (Max) :

±20V

Turn On Delay Time :

18 ns

Length :

15.87mm

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

38A

Fall Time (Typ) :

20 ns

Turn-Off Delay Time :

34 ns

Mounting Type :

Through Hole

Factory Lead Time :

12 Weeks

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

20.7mm