IRFP4110PBF
- Mfr.Part #
- IRFP4110PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 120A TO247AC
- Stock
- 33,394
- In Stock :
- 33,394
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 12 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- Series :
- HEXFET®
- Package / Case :
- TO-247-3
- Termination :
- Through Hole
- Peak Reflow Temperature (Cel) :
- 250
- Continuous Drain Current (ID) :
- 180A
- Gate Charge (Qg) (Max) @ Vgs :
- 210nC @ 10V
- Turn-Off Delay Time :
- 78 ns
- Radiation Hardening :
- No
- Length :
- 15.87mm
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 4.5m Ω @ 75A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 88 ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 370W
- Recovery Time :
- 75 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2008
- Terminal Finish :
- MATTE TIN OVER NICKEL
- Height :
- 20.7mm
- Threshold Voltage :
- 4V
- Nominal Vgs :
- 4 V
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 67ns
- Resistance :
- 4.5mOhm
- Number of Terminations :
- 3
- Dual Supply Voltage :
- 100V
- Lead Free :
- Lead Free
- Width :
- 5.3086mm
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 100V
- REACH SVHC :
- No SVHC
- Pulsed Drain Current-Max (IDM) :
- 670A
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 370W Tc
- Mount :
- Through Hole
- Turn On Delay Time :
- 25 ns
- Mounting Type :
- Through Hole
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- Number of Pins :
- 3
- FET Type :
- N-Channel
- JEDEC-95 Code :
- TO-247AC
- Input Capacitance (Ciss) (Max) @ Vds :
- 9620pF @ 50V
- Datasheets
- IRFP4110PBF

N-Channel Tube 4.5m Ω @ 75A, 10V ±20V 9620pF @ 50V 210nC @ 10V TO-247-3
IRFP4110PBF Description
IRFP4110PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 100V. The operating temperature of the IRFP4110PBF is -55°C~175°C TJ and its maximum power dissipation is 370W Tc. IRFP4110PBF has 3 pins and it is available in Tube packaging way. The Drain to Source Breakdown Voltage of IRFP4110PBF is 100V.
IRFP4110PBF Features
-
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
-
Fully Characterized Capacitance and Avalanche SOA
-
Enhanced body diode dV/dt and dI/dt Capability
IRFP4110PBF Applications
-
High Efficiency Synchronous Rectification in SMPS
-
Uninterruptible Power Supply
-
High Speed Power Switching
-
Hard Switched and High Frequency Circuits
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