IRFP4110PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Termination :

Through Hole

Rise Time :

67ns

Package / Case :

TO-247-3

JESD-609 Code :

e3

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Factory Lead Time :

12 Weeks

JEDEC-95 Code :

TO-247AC

Peak Reflow Temperature (Cel) :

250

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

30

Turn On Delay Time :

25 ns

Fall Time (Typ) :

88 ns

Dual Supply Voltage :

100V

Mounting Type :

Through Hole

Turn-Off Delay Time :

78 ns

Input Capacitance (Ciss) (Max) @ Vds :

9620pF @ 50V

Number of Elements :

1

Power Dissipation-Max :

370W Tc

Pulsed Drain Current-Max (IDM) :

670A

Mount :

Through Hole

Nominal Vgs :

4 V

Terminal Finish :

MATTE TIN OVER NICKEL

Width :

5.3086mm

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 75A, 10V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

4.5mOhm

Height :

20.7mm

Continuous Drain Current (ID) :

180A

ECCN Code :

EAR99

Power Dissipation :

370W

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

Element Configuration :

Single

Recovery Time :

75 ns

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Length :

15.87mm

Threshold Voltage :

4V

Number of Pins :

3

Radiation Hardening :

No

Vgs (Max) :

±20V

Published :

2008

Drain to Source Breakdown Voltage :

100V

Packaging :

Tube