IRFP4004PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

330nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Length :

15.87mm

Vgs (Max) :

±20V

Width :

5.3086mm

Power Dissipation :

380W

Input Capacitance (Ciss) (Max) @ Vds :

8920pF @ 25V

FET Type :

N-Channel

Published :

2003

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

40V

Package / Case :

TO-247-3

ECCN Code :

EAR99

Packaging :

Tube

Resistance :

1.7MOhm

Number of Terminations :

3

Number of Pins :

3

Recovery Time :

130 ns

Avalanche Energy Rating (Eas) :

290 mJ

Height :

20.7mm

Power Dissipation-Max :

380W Tc

Rise Time :

370ns

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

160 ns

Continuous Drain Current (ID) :

350A

Series :

HEXFET®

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Mount :

Through Hole

Turn On Delay Time :

59 ns

Case Connection :

DRAIN

Threshold Voltage :

4V

Lead Free :

Lead Free

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

1.7m Ω @ 195A, 10V

Transistor Element Material :

SILICON

Fall Time (Typ) :

190 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

JEDEC-95 Code :

TO-247AC

Element Configuration :

Single

REACH SVHC :

No SVHC

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

195A Tc