IRFP3710PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

59ns

REACH SVHC :

No SVHC

Power Dissipation-Max :

200W Tc

Power Dissipation :

180W

Max Junction Temperature (Tj) :

175°C

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Fall Time (Typ) :

48 ns

Recovery Time :

320 ns

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Turn-Off Delay Time :

58 ns

Published :

1998

Element Configuration :

Single

Dual Supply Voltage :

100V

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Width :

5.3mm

Threshold Voltage :

2V

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 25V

Drain to Source Breakdown Voltage :

100V

Current Rating :

57A

Vgs (Max) :

±20V

Termination :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

57A

FET Type :

N-Channel

Number of Terminations :

3

Number of Pins :

3

Package / Case :

TO-247-3

Factory Lead Time :

12 Weeks

Turn On Delay Time :

14 ns

Mount :

Through Hole

Packaging :

Bulk

Nominal Vgs :

4 V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

57A Tc

ECCN Code :

EAR99

Series :

HEXFET®

Vgs(th) (Max) @ Id :

4V @ 250µA

Additional Feature :

AVALANCHE RATED

Height :

24.99mm

Lead Free :

Contains Lead, Lead Free

Length :

15.875mm

Transistor Element Material :

SILICON

Voltage - Rated DC :

100V

Number of Elements :

1

Drain-source On Resistance-Max :

0.025Ohm

JEDEC-95 Code :

TO-247AC

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

25m Ω @ 28A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ