IRFP350LCPBF
- Mfr.Part #
- IRFP350LCPBF
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 16A TO247-3
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current Rating :
- 16A
- Min Operating Temperature :
- -55°C
- Turn-Off Delay Time :
- 33 ns
- Number of Pins :
- 3
- Nominal Vgs :
- 4 V
- Width :
- 5.31mm
- Supplier Device Package :
- TO-247-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On Max :
- 300 mΩ
- Gate Charge (Qg) (Max) @ Vgs :
- 76nC @ 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Through Hole
- Drain to Source Resistance :
- 300mOhm
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Input Capacitance :
- 2.2nF
- Continuous Drain Current (ID) :
- 16A
- Length :
- 15.87mm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Vgs (Max) :
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2200pF @ 25V
- Rise Time :
- 54ns
- Radiation Hardening :
- No
- REACH SVHC :
- Unknown
- Threshold Voltage :
- 4V
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Package / Case :
- TO-247-3
- Height :
- 20.7mm
- Fall Time (Typ) :
- 35 ns
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Published :
- 2014
- Weight :
- 38.000013g
- Power Dissipation-Max :
- 190W Tc
- Number of Elements :
- 1
- Resistance :
- 300mOhm
- Power Dissipation :
- 190W
- Drain to Source Breakdown Voltage :
- 400V
- Drain to Source Voltage (Vdss) :
- 400V
- Voltage - Rated DC :
- 400V
- Packaging :
- Tube
- Number of Channels :
- 1
- Element Configuration :
- Single
- Max Operating Temperature :
- 150°C
- Turn On Delay Time :
- 14 ns
- Rds On (Max) @ Id, Vgs :
- 300mOhm @ 9.6A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 8 Weeks
- Datasheets
- IRFP350LCPBF

N-Channel Tube 300mOhm @ 9.6A, 10V ±30V 2200pF @ 25V 76nC @ 10V 400V TO-247-3
IRFP350LCPBF Overview
A device's maximal input capacitance is 2200pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 16A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 400V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 33 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 300mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 14 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This transistor requires a 400V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFP350LCPBF Features
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 33 ns
single MOSFETs transistor is 300mOhm
a threshold voltage of 4V
a 400V drain to source voltage (Vdss)
IRFP350LCPBF Applications
There are a lot of Vishay Siliconix
IRFP350LCPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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