IRFP3415PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Number of Pins :

3

Packaging :

Bulk

Drive Voltage (Max Rds On,Min Rds On) :

10V

Resistance :

42mOhm

Dual Supply Voltage :

150V

Operating Temperature :

-55°C~175°C TJ

Published :

2003

Nominal Vgs :

4 V

Avalanche Energy Rating (Eas) :

590 mJ

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 25V

Package / Case :

TO-247-3

Rise Time :

55ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Height :

20.7mm

Case Connection :

DRAIN

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Turn-Off Delay Time :

71 ns

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

150V

Vgs(th) (Max) @ Id :

4V @ 250µA

Width :

5.3086mm

Continuous Drain Current (ID) :

43A

Vgs (Max) :

±20V

Turn On Delay Time :

12 ns

Power Dissipation :

200W

Length :

15.87mm

Rds On (Max) @ Id, Vgs :

42m Ω @ 22A, 10V

Threshold Voltage :

4V

Number of Elements :

1

Power Dissipation-Max :

200W Tc

Current Rating :

43A

Number of Terminations :

3

Factory Lead Time :

12 Weeks

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Fall Time (Typ) :

69 ns

Series :

HEXFET®

Mount :

Through Hole

Voltage - Rated DC :

150V

Gate to Source Voltage (Vgs) :

20V

JEDEC-95 Code :

TO-247AC

Current - Continuous Drain (Id) @ 25°C :

43A Tc