IRFP3306PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Rise Time :

76ns

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Package / Case :

TO-247-3

Drain to Source Breakdown Voltage :

60V

Turn On Delay Time :

15 ns

Number of Terminations :

3

Element Configuration :

Single

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Recovery Time :

31 ns

Series :

HEXFET®

Fall Time (Typ) :

77 ns

Gate to Source Voltage (Vgs) :

20V

Resistance :

4.2mOhm

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

160A

Lead Free :

Lead Free

Number of Elements :

1

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

620A

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

12 Weeks

Length :

15.87mm

JEDEC-95 Code :

TO-247AC

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Published :

2008

Turn-Off Delay Time :

40 ns

Power Dissipation-Max :

220W Tc

Threshold Voltage :

4V

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 75A, 10V

Vgs(th) (Max) @ Id :

4V @ 150μA

Packaging :

Tube

Width :

5.3086mm

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Power Dissipation :

220W

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

4520pF @ 50V

Height :

20.7mm

Radiation Hardening :

No