IRFP3306PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 75A, 10V

Vgs(th) (Max) @ Id :

4V @ 150μA

Case Connection :

DRAIN

Radiation Hardening :

No

Published :

2008

Height :

20.7mm

Turn On Delay Time :

15 ns

Pulsed Drain Current-Max (IDM) :

620A

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Rise Time :

76ns

Fall Time (Typ) :

77 ns

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Length :

15.87mm

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-247-3

Turn-Off Delay Time :

40 ns

Width :

5.3086mm

Drain to Source Breakdown Voltage :

60V

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Recovery Time :

31 ns

Number of Terminations :

3

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

160A

Resistance :

4.2mOhm

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

4520pF @ 50V

Power Dissipation-Max :

220W Tc

REACH SVHC :

No SVHC

JEDEC-95 Code :

TO-247AC

Threshold Voltage :

4V

FET Type :

N-Channel

Power Dissipation :

220W

Packaging :

Tube