IRFP32N50K
- Mfr.Part #
- IRFP32N50K
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 32A TO247-3
- Stock
- 18,304
- In Stock :
- 18,304
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- RoHS Status :
- Non-RoHS Compliant
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance :
- 5.28nF
- Voltage - Rated DC :
- 500V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Max Operating Temperature :
- 150°C
- Number of Channels :
- 1
- Drain to Source Voltage (Vdss) :
- 500V
- Current Rating :
- 32A
- Length :
- 15.87mm
- Package / Case :
- TO-247-3
- Published :
- 2014
- Power Dissipation-Max :
- 460W Tc
- Fall Time (Typ) :
- 54 ns
- Continuous Drain Current (ID) :
- 32A
- Lead Free :
- Contains Lead
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Vgs (Max) :
- ±30V
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- Turn-Off Delay Time :
- 48 ns
- Element Configuration :
- Single
- Min Operating Temperature :
- -55°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 30V
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 160mOhm @ 32A, 10V
- Rds On Max :
- 160 mΩ
- Width :
- 5.31mm
- Supplier Device Package :
- TO-247-3
- Mount :
- Through Hole
- Weight :
- 38.000013g
- Drain to Source Resistance :
- 160mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 5280pF @ 25V
- Rise Time :
- 120ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Height :
- 20.7mm
- Packaging :
- Tube
- Turn On Delay Time :
- 28 ns
- Drain to Source Breakdown Voltage :
- 500V
- Datasheets
- IRFP32N50K

N-Channel Tube 160mOhm @ 32A, 10V ±30V 5280pF @ 25V 190nC @ 10V 500V TO-247-3
IRFP32N50K Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5280pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 32A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 48 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 160mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 28 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRFP32N50K Features
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 48 ns
single MOSFETs transistor is 160mOhm
a 500V drain to source voltage (Vdss)
IRFP32N50K Applications
There are a lot of Vishay Siliconix
IRFP32N50K applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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