IRFP3206PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2008

Max Junction Temperature (Tj) :

175°C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Resistance :

3mOhm

Factory Lead Time :

12 Weeks

Number of Pins :

3

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

6540pF @ 50V

Height :

24.99mm

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

840A

Power Dissipation-Max :

280W Tc

Drain to Source Breakdown Voltage :

60V

Radiation Hardening :

No

ECCN Code :

EAR99

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Turn-Off Delay Time :

55 ns

Rise Time :

82ns

JEDEC-95 Code :

TO-247AC

Fall Time (Typ) :

83 ns

Number of Channels :

1

Vgs(th) (Max) @ Id :

4V @ 150μA

Rds On (Max) @ Id, Vgs :

3m Ω @ 75A, 10V

Recovery Time :

50 ns

REACH SVHC :

No SVHC

Threshold Voltage :

4V

Length :

15.87mm

Power Dissipation :

280W

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Vgs (Max) :

±20V

Width :

5.3086mm

Package / Case :

TO-247-3

Packaging :

Tube

Turn On Delay Time :

19 ns

Continuous Drain Current (ID) :

200A

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Number of Terminations :

3

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1