IRFP31N50L
- Mfr.Part #
- IRFP31N50L
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 31A TO247-3
- Stock
- 20,276
- In Stock :
- 20,276
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 20.7mm
- Turn-Off Delay Time :
- 54 ns
- Voltage - Rated DC :
- 500V
- Radiation Hardening :
- No
- Mount :
- Through Hole
- Number of Elements :
- 1
- Current Rating :
- 31A
- Width :
- 5.31mm
- Turn On Delay Time :
- 28 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±30V
- Gate to Source Voltage (Vgs) :
- 30V
- Lead Free :
- Contains Lead
- Power Dissipation :
- 460W
- Supplier Device Package :
- TO-247-3
- Number of Pins :
- 3
- RoHS Status :
- Non-RoHS Compliant
- Max Operating Temperature :
- 150°C
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Number of Channels :
- 1
- Rise Time :
- 115ns
- Rds On (Max) @ Id, Vgs :
- 180mOhm @ 19A, 10V
- Mounting Type :
- Through Hole
- Length :
- 15.87mm
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 38.000013g
- Input Capacitance (Ciss) (Max) @ Vds :
- 5000pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 31A Tc
- Drain to Source Resistance :
- 180mOhm
- Input Capacitance :
- 5nF
- FET Type :
- N-Channel
- Packaging :
- Tube
- Rds On Max :
- 180 mΩ
- Drain to Source Voltage (Vdss) :
- 500V
- Continuous Drain Current (ID) :
- 31A
- Fall Time (Typ) :
- 53 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-247-3
- Power Dissipation-Max :
- 460W Tc
- Published :
- 2016
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 210nC @ 10V
- Min Operating Temperature :
- -55°C
- Datasheets
- IRFP31N50L

N-Channel Tube 180mOhm @ 19A, 10V ±30V 5000pF @ 25V 210nC @ 10V 500V TO-247-3
IRFP31N50L Overview
A device's maximum input capacitance is 5000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 31A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 54 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 180mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 28 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFP31N50L Features
a continuous drain current (ID) of 31A
the turn-off delay time is 54 ns
single MOSFETs transistor is 180mOhm
a 500V drain to source voltage (Vdss)
IRFP31N50L Applications
There are a lot of Vishay Siliconix
IRFP31N50L applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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