IRFP3077PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

76ns

Turn On Delay Time :

15 ns

Height :

20.7mm

Element Configuration :

Single

Packaging :

Tube

Continuous Drain Current (ID) :

120A

Length :

15.87mm

Recovery Time :

63 ns

Width :

5.3086mm

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Threshold Voltage :

4V

Mount :

Through Hole

Drain to Source Breakdown Voltage :

75V

Fall Time (Typ) :

77 ns

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

9400pF @ 50V

Lead Free :

Lead Free

ECCN Code :

EAR99

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Factory Lead Time :

12 Weeks

Series :

HEXFET®

Radiation Hardening :

No

Power Dissipation :

340W

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 75A, 10V

Published :

2007

Number of Pins :

3

Dual Supply Voltage :

75V

Package / Case :

TO-247-3

Termination :

Through Hole

Avalanche Energy Rating (Eas) :

200 mJ

Nominal Vgs :

4 V

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

200A

Number of Terminations :

3

Transistor Element Material :

SILICON

Resistance :

3.3MOhm

Pulsed Drain Current-Max (IDM) :

850A

JEDEC-95 Code :

TO-247AC

Turn-Off Delay Time :

40 ns

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

340W Tc

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V