IRFP3006PBF
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- Mfr.Part #
- IRFP3006PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 195A TO247AC
- Stock
- 9,461
- In Stock ：
- 9,461
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 189 ns
- Weight :
- 38.000013g
- Operating Temperature :
- -55°C~175°C TJ
- REACH SVHC :
- No SVHC
- Threshold Voltage :
- 4V
- Rise Time :
- 182ns
- Gate to Source Voltage (Vgs) :
- 4V
- Factory Lead Time :
- 12 Weeks
- Mount :
- Through Hole
- Packaging :
- Tube
- Turn-Off Delay Time :
- 118 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 300nC @ 10V
- Published :
- 2012
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 375W Tc
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 2.5m Ω @ 170A, 10V
- Turn On Delay Time :
- 16 ns
- Continuous Drain Current (ID) :
- 195A
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 195A Tc
- Number of Channels :
- 1
- Drain to Source Voltage (Vdss) :
- 60V
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Package / Case :
- TO-247-3
- Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 8970pF @ 50V
- Vgs (Max) :
- ±20V
- Datasheets
- IRFP3006PBF
N-Channel Tube 2.5m Ω @ 170A, 10V ±20V 8970pF @ 50V 300nC @ 10V 60V TO-247-3
Description
The increased gate, avalanche, and dynamic dV/dt ruggedness of the IRFP3006PBF HEXFET? N-channel Power MOSFET. In SMPS, hard switched, and high-frequency circuits, it is appropriate for synchronous rectification with high efficiency. An N-Channel MOSFET makes a current channel out of electrons. This makes it possible for electrons to pass swiftly and readily across the current when the MOSFET is turned on. Since of the unique properties of N-Channel MOSFETs, the P-Channel chip must be 2 to 3 times larger than the N-Channel chip because the mobility of the carriers is around 2 to 3 times higher for the same RDS(on) value. It is common practice to use MOSFET transistor N-Channels in high current applications because of this.
Features
-
Enhanced body diode dV/dt and dI/dt Capability
-
Lead-Free
-
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
-
Fully Characterized Capacitance and Avalanche SOA
-
Maximum junction temperature (TJ(max))
Applications
-
High-Speed Power Switching
-
Hard Switched and High-Frequency Circuits
-
High-Efficiency Synchronous Rectification in SMPS
-
Uninterruptible Power Supply
-
Power Management
-
Industrial
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