IRFP2907PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

12 Weeks

REACH SVHC :

No SVHC

Lead Free :

Contains Lead, Lead Free

Number of Terminations :

3

Power Dissipation-Max :

470W Tc

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~175°C TJ

Max Junction Temperature (Tj) :

175°C

Turn On Delay Time :

23 ns

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 125A, 10V

Series :

HEXFET®

Current Rating :

209A

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Number of Pins :

3

Drain Current-Max (Abs) (ID) :

90A

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

13000pF @ 25V

Case Connection :

DRAIN

Nominal Vgs :

4 V

Mounting Type :

Through Hole

Height :

24.99mm

Recovery Time :

210 ns

Gate Charge (Qg) (Max) @ Vgs :

620nC @ 10V

RoHS Status :

ROHS3 Compliant

Rise Time :

190ns

Fall Time (Typ) :

130 ns

Continuous Drain Current (ID) :

209A

Pulsed Drain Current-Max (IDM) :

840A

Packaging :

Tube

Published :

2004

Length :

15.87mm

Mount :

Through Hole

Power Dissipation :

470W

Operating Mode :

ENHANCEMENT MODE

Width :

5.3086mm

Current - Continuous Drain (Id) @ 25°C :

209A Tc

Termination :

Through Hole

Threshold Voltage :

4V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

75V

Radiation Hardening :

No

ECCN Code :

EAR99

Dual Supply Voltage :

75V

Resistance :

4.5mOhm

Element Configuration :

Single

Transistor Element Material :

SILICON

Package / Case :

TO-247-3

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

75V

Contact Plating :

Tin

JEDEC-95 Code :

TO-247AC

Turn-Off Delay Time :

130 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V