IRFP264NPBF
- Mfr.Part #
- IRFP264NPBF
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 44A TO247-3
- Stock
- 9,474
- In Stock :
- 9,474
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 60mOhm @ 25A, 10V
- REACH SVHC :
- Unknown
- Length :
- 15.87mm
- Gate Charge (Qg) (Max) @ Vgs :
- 210nC @ 10V
- Vgs (Max) :
- ±20V
- Published :
- 2009
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 52 ns
- Number of Channels :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 3860pF @ 25V
- Drain to Source Voltage (Vdss) :
- 250V
- Min Operating Temperature :
- -55°C
- Threshold Voltage :
- 4V
- Drain to Source Resistance :
- 60mOhm
- Mount :
- Through Hole
- Height :
- 20.7mm
- Supplier Device Package :
- TO-247-3
- Continuous Drain Current (ID) :
- 44A
- Packaging :
- Tube
- Weight :
- 38.000013g
- Width :
- 5.31mm
- Fall Time (Typ) :
- 53 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Rds On Max :
- 60 mΩ
- Power Dissipation-Max :
- 380W Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Breakdown Voltage :
- 250V
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance :
- 3.86nF
- Package / Case :
- TO-247-3
- Rise Time :
- 62ns
- Element Configuration :
- Single
- Turn On Delay Time :
- 17 ns
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Max Operating Temperature :
- 175°C
- FET Type :
- N-Channel
- Datasheets
- IRFP264NPBF

N-Channel Tube 60mOhm @ 25A, 10V ±20V 3860pF @ 25V 210nC @ 10V 250V TO-247-3
IRFP264NPBF Overview
A device's maximal input capacitance is 3860pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 44A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 250V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 52 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 60mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFP264NPBF Features
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 52 ns
single MOSFETs transistor is 60mOhm
a threshold voltage of 4V
a 250V drain to source voltage (Vdss)
IRFP264NPBF Applications
There are a lot of Vishay Siliconix
IRFP264NPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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