IRFP260PBF
- Mfr.Part #
- IRFP260PBF
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 46A TO247-3
- Stock
- 220,342
- In Stock :
- 220,342
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Weight :
- 38.000013g
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 200V
- REACH SVHC :
- Unknown
- Threshold Voltage :
- 2V
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 200V
- Published :
- 2011
- Height :
- 20.7mm
- Vgs (Max) :
- ±20V
- Rds On Max :
- 55 mΩ
- Factory Lead Time :
- 8 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 5200pF @ 25V
- FET Type :
- N-Channel
- Min Operating Temperature :
- -55°C
- Drain to Source Breakdown Voltage :
- 200V
- Supplier Device Package :
- TO-247-3
- Width :
- 5.31mm
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-247-3
- Packaging :
- Tube
- Current Rating :
- 46A
- Power Dissipation-Max :
- 280W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 46A Tc
- Turn On Delay Time :
- 23 ns
- Number of Channels :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Resistance :
- 55mOhm
- Fall Time (Typ) :
- 94 ns
- Max Operating Temperature :
- 150°C
- Length :
- 15.87mm
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 100 ns
- Continuous Drain Current (ID) :
- 46A
- Gate Charge (Qg) (Max) @ Vgs :
- 230nC @ 10V
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 55mOhm @ 28A, 10V
- Number of Pins :
- 3
- Input Capacitance :
- 5.2nF
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Power Dissipation :
- 280W
- Resistance :
- 55mOhm
- Rise Time :
- 120ns
- Datasheets
- IRFP260PBF

N-Channel Tube 55mOhm @ 28A, 10V ±20V 5200pF @ 25V 230nC @ 10V 200V TO-247-3
IRFP260PBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5200pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 200V.As a result of its turn-off delay time, which is 100 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 55mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 23 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2V.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFP260PBF Features
a continuous drain current (ID) of 46A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 100 ns
single MOSFETs transistor is 55mOhm
a threshold voltage of 2V
a 200V drain to source voltage (Vdss)
IRFP260PBF Applications
There are a lot of Vishay Siliconix
IRFP260PBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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